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2SA2169-E

2SA2169-E
Изображения только для справки
номер части
2SA2169-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 10A 50V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 290 mV
Configuration
Single
Continuous Collector Current
- 10 A
DC Collector/Base Gain hfe Min
200
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
130 MHz
Maximum DC Collector Current
- 13 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Package / Case
TO-251-3
Packaging
Bulk
Pd - Power Dissipation
20 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2169
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

Напишите свой собственный Reivew
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
packed pretty good, all is ok,-seller.
High Quality driver, works excellent. It came to Moscow for 7 days.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Больше

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