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2SA2124-TD-E

2SA2124-TD-E
Изображения только для справки
номер части
2SA2124-TD-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT BIP PNP 2A 30V
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 30 V
Collector- Emitter Voltage VCEO Max
- 30 V
Collector-Emitter Saturation Voltage
- 200 mV
Configuration
Single
DC Collector/Base Gain hfe Min
200 at - 100 mA, - 2 V
DC Current Gain hFE Max
560 at - 100 mA, - 2 V
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
440 MHz
Maximum DC Collector Current
- 2 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.5 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2124
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

Напишите свой собственный Reivew
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Fast shippng. Good quality. I recomend this seller.
I received the product right, thank you very much 2018/12/03 ★★★★★
Parcel received shook cool all 10 pieces is not checked check unsubscribe
Received very good
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