номер части QH8MA4TCR категории MOSFET RoHS Техническая спецификация QH8MA4TCR Описание MOSFET Zener Diode, 100mW, 2 Pin.
категории MOSFET Channel Mode Enhancement Configuration Dual Fall Time 7 ns, 22 ns Forward Transconductance - Min 4.4 S, 5.5 S Id - Continuous Drain Current 9 A, 8 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 2 Channel Package / Case TSMT-8 Packaging Reel Packaging Cut Tape Packaging MouseReel Part # Aliases Pd - Power Dissipation 2.6 W Product Type MOSFET Qg - Gate Charge 15.5 nC, 19.6 nC Rds On - Drain-Source Resistance 12.3 mOhms, 22 mOhms Rise Time 19 ns, 16 ns Technology SI Transistor Polarity N-Channel, P-Channel Transistor Type 1 N-Channel, 1 P-Channel Typical Turn-Off Delay Time 33 ns, 55 ns Typical Turn-On Delay Time 8 ns, 10 ns Vds - Drain-Source Breakdown Voltage 30 V Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 1 V, 2.5 V