- номер части
- QH8MA2TCR
- категории
- MOSFET
- RoHS
- Техническая спецификация
- Описание
- MOSFET 30V Nch+Pch Power MOSFET
QH8MA2TCR
Изображения только для справки
Характеристики
- категории
- MOSFET
- Channel Mode
- Enhancement
- Configuration
- Dual
- Fall Time
- 5.7 ns, 8.5 ns
- Forward Transconductance - Min
- 1.4 S, 1.9 S
- Id - Continuous Drain Current
- 4.5 A, 3 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- -
- Mounting Style
- SMD/SMT
- Number of Channels
- 2 Channel
- Package / Case
- TSMT-8
- Packaging
- Reel
- Packaging
- Cut Tape
- Packaging
- MouseReel
- Part # Aliases
- Pd - Power Dissipation
- 1.5 W
- Product Type
- MOSFET
- Qg - Gate Charge
- 8.4 nC, 7.8 nC
- Rds On - Drain-Source Resistance
- 25 mOhms, 55 mOhms
- Rise Time
- 8 ns, 16.8 ns
- Technology
- SI
- Transistor Polarity
- N-Channel, P-Channel
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Typical Turn-Off Delay Time
- 12 ns, 27.6 ns
- Typical Turn-On Delay Time
- 7.2 ns, 7.9 ns
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Vgs - Gate-Source Voltage
- 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1 V
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последние обзоры
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Takes 8 days to Japan. Good!
Alex Fragkos
Everything is excellent! recommend this seller!
Stoyan Chaykov
fast delivery
Mike Ibarra
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
QH8MA2TCR Новости
03/14/2023
03/13/2023
03/13/2023
Ключевые слова к QH8M
- QH8MA2TCR интегрированный
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- QH8MA2TCR Технические данные
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