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QH8MA3TCR

QH8MA3TCR
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номер части
QH8MA3TCR
категории
MOSFET
RoHS
Техническая спецификация
Описание
MOSFET 30V N+P Ch MOSFET
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Характеристики

категории
MOSFET
Channel Mode
Enhancement
Configuration
Dual
Fall Time
5.7 ns, 20 ns
Forward Transconductance - Min
2.7 S, 3.3 S
Id - Continuous Drain Current
7 A, 5.5 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
2 Channel
Package / Case
TSMT-8
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Part # Aliases
Pd - Power Dissipation
2.5 W
Product Type
MOSFET
Qg - Gate Charge
7.2 nC, 10 nC
Rds On - Drain-Source Resistance
22 mOhms, 37 mOhms
Rise Time
8 ns, 12 ns
Technology
SI
Transistor Polarity
N-Channel, P-Channel
Transistor Type
1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time
12 ns, 40 ns
Typical Turn-On Delay Time
7.2 ns, 8 ns
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
1 V, 2.5 V

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последние обзоры

Напишите свой собственный Reivew
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
fast delivery, item as described, thanks!!
Works. Find the price of this product is very good
High Quality driver, works excellent. It came to Moscow for 7 days.
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Больше

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