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2SA2030T2L

2SA2030T2L
Изображения только для справки
номер части
2SA2030T2L
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT PNP 12V 0.5A
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 15 V
Collector- Emitter Voltage VCEO Max
- 12 V
Collector-Emitter Saturation Voltage
- 100 V
Configuration
Single
DC Collector/Base Gain hfe Min
270
DC Current Gain hFE Max
680
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
260 MHz
Height
0.5 mm
Length
1.2 mm
Maximum DC Collector Current
- 500 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Package / Case
VMT-3
Packaging
Cut Tape
Packaging
MouseReel
Packaging
Reel
Part # Aliases
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA2030
Technology
SI
Transistor Polarity
PNP
Unit Weight
Width
0.8 mm

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последние обзоры

Напишите свой собственный Reivew
thanks for resending, this item is good !
Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow
Thank You all fine, packed very well
Works. Find the price of this product is very good
Goods came in two weeks. Well packed. Track number tracked
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