номер части 2SA2154CT-GR,L3F категории Bipolar Transistors - BJT RoHS Техническая спецификация 2SA2154CT-GR,L3F Описание Bipolar Transistors - BJT Transistor for Low Freq. Amplification
категории Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 180 mV Configuration Single DC Collector/Base Gain hfe Min 120 DC Current Gain hFE Max 400 Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Height 0.38 mm Length 1 mm Maximum DC Collector Current - 100 mA Maximum Operating Temperature + 150 C Mounting Style SMD/SMT Package / Case CST-3 Packaging Reel Packaging Cut Tape Packaging MouseReel Pd - Power Dissipation 100 mW Product Type BJTs - Bipolar Transistors Series 2SA2154 Technology SI Transistor Polarity PNP Width 0.6 mm