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2SA2125-TD-E

2SA2125-TD-E
Изображения только для справки
номер части
2SA2125-TD-E
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT DC-DC CONVERTER
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 50 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 125 mV, - 250 mV
Configuration
Single
Continuous Collector Current
- 3 A
DC Collector/Base Gain hfe Min
200
DC Current Gain hFE Max
560
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
390 MHz
Maximum DC Collector Current
- 6 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-3
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
3.5 W
Product Type
BJTs - Bipolar Transistors
Series
2SA2125
Technology
SI
Transistor Polarity
PNP
Unit Weight

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последние обзоры

Напишите свой собственный Reivew
everything as it is written in the description of the same deductible prodovtsu deserved
packed pretty good, all is ok,-seller.
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Shipping a little 1 weeks, normal packing, the procedure is complete.
Great product. Arrived ahead of time. Thank you
Больше

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