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2SA2029T2LR

2SA2029T2LR
номер части
2SA2029T2LR
категории
Bipolar Transistors - BJT
RoHS
Техническая спецификация
Описание
Bipolar Transistors - BJT TRANSISTOR PNP GEN. PURPOSE HFE RANK 'R'
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Характеристики

категории
Bipolar Transistors - BJT
Collector- Base Voltage VCBO
- 60 V
Collector- Emitter Voltage VCEO Max
- 50 V
Collector-Emitter Saturation Voltage
- 0.5 V
Configuration
Single
Continuous Collector Current
- 0.15 A
DC Collector/Base Gain hfe Min
120
DC Current Gain hFE Max
560
Emitter- Base Voltage VEBO
- 6 V
Gain Bandwidth Product fT
140 MHz
Height
0.5 mm
Length
1.2 mm
Maximum DC Collector Current
- 0.15 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Packaging
Reel
Packaging
Cut Tape
Packaging
MouseReel
Pd - Power Dissipation
150 mW
Product Type
BJTs - Bipolar Transistors
Series
2SA2029
Technology
SI
Transistor Polarity
PNP
Width
0.8 mm

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последние обзоры

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Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Thank You all fine, packed very well
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
fast delivery
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